Electronic device

ABSTRACT

An electronic device includes: a base layer; a display element layer on the base layer; and a reflection control layer on the display element layer and comprising a dye, the display element layer comprising: a pixel definition layer having first, second, and third openings formed therethrough; a first light emitting element corresponding to the first opening and emitting a first light; a second light emitting element corresponding to the second opening and emitting a second light different from the first light; a light receiving element corresponding to the third opening; and an inorganic absorbing layer on the first and second light emitting elements, and wherein the reflection control layer overlaps the first light emitting element and the second light emitting element.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to and the benefit of KoreanPatent Application No. 10-2021-0119869, filed on Sep. 8, 2021 under 35U.S.C. § 119, the entire content of which is hereby incorporated byreference.

BACKGROUND 1. Field

Aspects of some embodiments of the present disclosure relate to anelectronic device.

2. Description of the Related Art

Multimedia electronic devices, such as televisions, mobile phones,tablet computers, navigation units, and game units, include a displaydevice to display images and an input sensing device to sense externalinput, for example, from touch input. For example, some electronicdevices may have a function to detect a fingerprint of a user.

Methods for sensing a user's fingerprint may include, for example, acapacitive method that senses a variation in capacitance formed betweenelectrodes, an optical method that senses an incident light using anoptical sensor, and an ultrasonic method that senses a vibration using apiezoelectric material. Meanwhile, when the sensor of the optical methodis employed, it is required to block the noises, e.g., noises caused byan external light, to improve the fingerprint recognition performance.

The above information disclosed in this Background section is only forenhancement of understanding of the background and therefore theinformation discussed in this Background section does not necessarilyconstitute prior art.

SUMMARY

Aspects of some embodiments of the present disclosure relate to anelectronic device. For example, some embodiments of the presentdisclosure relate to an electronic device including a light receivingelement in a display area thereof.

Aspects of some embodiments of the present disclosure include anelectronic device including a light receiving element with relativelyimproved sensitivity by improving a transmittance with respect to asensing light and reducing noise caused by external light.

Aspects of some embodiments of the inventive concept include anelectronic device including a base layer; a display element layer on thebase layer; and a reflection control layer on the display element layerand including a dye. The display element layer includes a pixeldefinition layer provided with first, second, and third openings definedtherethrough; a first light emitting element corresponding to the firstopening and emitting a first light; a second light emitting elementcorresponding to the second opening and emitting a second lightdifferent from the first light; a light receiving element correspondingto the third opening; and an inorganic absorbing layer on the first andsecond light emitting elements. The reflection control layer overlapsthe first light emitting element and the second light emitting element.

According to some embodiments, the reflection control layer includes afirst dye having a maximum absorption wavelength within a range fromabout 420 nm to about 500 nm and a second dye having a maximumabsorption wavelength within a range from about 560 nm to about 620 nm.

According to some embodiments, the reflection control layer includes atleast one of a porphyrin-based dye or a tetraazaporphyrin-based dye.

According to some embodiments, the reflection control layer furtherincludes at least one of an infrared absorber or an ultravioletabsorber.

According to some embodiments, the reflection control layer is providedwith an opening pattern defined therethrough, and the opening patternoverlaps the light receiving element when viewed in a plane.

According to some embodiments, the electronic device further includes anorganic pattern portion in the opening pattern, and the organic patternportion includes at least one of a green dye or a yellow dye.

According to some embodiments, the organic pattern portion includes atleast one of a phthalocyanine-based dye or a quinophthalone-based dye.

According to some embodiments, the organic pattern portion furtherincludes an infrared absorber, and the infrared absorber includes atleast one of a diimmonium-based compound, a squarylium-based compound, acyanine-based compound, a phthalocyanine-based compound, or adithiolene-based compound.

According to some embodiments, the organic pattern portion furtherincludes an ultraviolet absorber, and the ultraviolet absorber includesat least one of a triazine-based compound or a benzotriazole-basedcompound.

According to some embodiments, the display element layer furtherincludes a low adhesion pattern on the light receiving element, and theinorganic absorbing layer does not overlap the low adhesion pattern whenviewed in a plane.

According to some embodiments, the low adhesion pattern includes afluorine-based compound.

According to some embodiments, the display element layer furtherincludes a capping layer on or under the inorganic absorbing layer, andthe capping layer overlaps the first and second light emitting elementsand the light receiving element when viewed in a plane.

According to some embodiments, the display element layer furtherincludes a capping layer between the inorganic absorbing layer and thefirst and second light emitting elements, and the capping layer does notoverlap the light receiving element when viewed in a plane.

According to some embodiments, the inorganic absorbing layer includes atransition metal, a post-transition metal, a lanthanide metal, or analloy of two or more metals selected from the transition metal, thepost-transition metal, and the lanthanide metal.

According to some embodiments, the electronic device further includes aninput sensing layer between the display element layer and the reflectioncontrol layer and a light blocking layer on the input sensing layer andprovided with upper openings defined therethrough. The input sensinglayer includes a first conductive layer on the display element layer, asecond conductive layer on the first conductive layer, and a sensinginsulating layer between the first conductive layer and the secondconductive layer, and the upper openings overlap the first, second, andthird openings, respectively.

Aspects of some embodiments of the inventive concept include anelectronic device including a display element layer including a lightemitting area, a transmission area, and a non-light-emitting areasurrounding the light emitting area and the transmission area and areflection control layer on the display element layer and including adye. The display element layer includes a light emitting element in thelight emitting area, a light receiving element in the transmission area,a low adhesion pattern on the light receiving element, and an inorganicabsorbing layer on the light emitting element. The inorganic absorbinglayer is provided with a transmission opening defined therethrough tooverlap the low adhesion pattern when viewed in a plane.

According to some embodiments, the display element layer furtherincludes a capping layer under the inorganic absorbing layer andoverlapping the light emitting area and the transmission area, and thelow adhesion pattern is on the capping layer.

According to some embodiments, the display element layer furtherincludes a capping layer under the inorganic absorbing layer andprovided with an opening defined therethrough to overlap thetransmission area, and the low adhesion pattern is in the opening of thecapping layer.

According to some embodiments, the display element layer furtherincludes a capping layer on the inorganic absorbing layer andoverlapping the light emitting area and the transmission area, and thecapping layer covers the low adhesion pattern.

According to some embodiments, the reflection control layer is providedwith an opening pattern defined therethrough, and the opening patternoverlaps the transmission opening when viewed in a plane.

According to the above, as the reflection control layer or the organicpattern, which is located on the light receiving element, absorbs alight in a specific wavelength region, noise from or caused by externallight may be reduced, and the sensing reliability of the light receivingelement is improved.

The inorganic absorbing layer and the reflection control layer, whichare located on the light receiving element, are patterned, and thus, thetransmittance with respect to the sensing light incident to the lightreceiving element and the sensitivity of the light receiving element areimproved.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other characteristics of embodiments according to thepresent disclosure will become readily apparent by reference to thefollowing detailed description when considered in conjunction with theaccompanying drawings wherein:

FIG. 1 is a perspective view of an electronic device according to someembodiments of the present disclosure;

FIG. 2 is an exploded perspective view of an electronic device accordingto some embodiments of the present disclosure;

FIG. 3 is a cross-sectional view of an electronic device according tosome embodiments of the present disclosure;

FIG. 4 is an enlarged plan view of a display panel corresponding to anarea DD′ of FIG. 2 according to some embodiments of the presentdisclosure;

FIG. 5 is a cross-sectional view of a display panel according to someembodiments of the present disclosure;

FIGS. 6A and 6B are cross-sectional views of an electronic deviceaccording to some embodiments of the present disclosure;

FIG. 7 is a graph showing a light transmittance of a reflection controllayer and an inorganic absorbing layer as a function of a wavelengthaccording to some embodiments of the present disclosure;

FIGS. 8A and 8B are cross-sectional views of electronic devicesaccording to some embodiments of the present disclosure;

FIGS. 9A-D are cross-sectional views of an electronic device accordingto some embodiments of the present disclosure; and

FIG. 10 is a cross-sectional view of an electronic device according tosome embodiments of the present disclosure.

DETAILED DESCRIPTION

Aspects of some embodiments of the present disclosure may be variouslymodified and realized in many different forms, and thus specificembodiments will be illustrated in the drawings and described in moredetail hereinbelow. However, embodiments according to the presentdisclosure should not be limited to the specific disclosed forms, and beconstrued to include all modifications, equivalents, or replacementsincluded in the spirit and scope of the present disclosure.

In the present disclosure, it will be understood that when an element(or area, layer, or portion) is referred to as being “on”, “connectedto” or “coupled to” another element or layer, it can be directly on,connected or coupled to the other element or layer or interveningelements or layers may be present.

Like numerals refer to like elements throughout. In the drawings, thethickness, ratio, and dimension of components are exaggerated foreffective description of the technical content. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

It will be understood that, although the terms first, second, etc., maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the teachings ofthe present disclosure. As used herein, the singular forms, “a”, “an”and “the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures.

It will be further understood that the terms “includes” and/or“including”, when used in this specification, specify the presence ofstated features, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, integers, steps, operations, elements, components,and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

Hereinafter, an electronic device according to some embodiments of thepresent disclosure will be explained in more detail with reference tothe accompanying drawings.

FIG. 1 is a perspective view of an electronic device DD according tosome embodiments of the present disclosure. FIG. 2 is an explodedperspective view of the electronic device DD according to someembodiments of the present disclosure. FIG. 3 is a cross-sectional viewof the electronic device DD according to some embodiments of the presentdisclosure.

The electronic device DD may be a device that is activated in responseto electrical signals to display images. For example, the electronicdevice DD may be applied to a large-sized electronic item, such as atelevision set or an outdoor billboard, and a small and medium-sizedelectronic item, such as a monitor, a mobile phone, a tablet computer, anavigation unit, or a game unit. However, these are merely examples, andthe electronic device DD may be applied to other electronic items aslong as they do not depart from the inventive concept of the presentdisclosure. FIG. 1 shows the mobile phone as a representative example ofthe electronic device DD.

Referring to FIG. 1 , the electronic device DD may have a rectangularshape with long sides in a first direction DR1 and short sides in asecond direction DR2 crossing the first direction DR1. However, theshape of the electronic device DD should not be limited to therectangular shape, and the electronic device DD may have a variety ofshapes, such as a circular shape, a polygonal shape, etc.

According to some embodiments, the electronic device DD may be flexible.The term “flexible” used herein refers to the property of being able tobe bent, and the flexible electronic device may include all structuresfrom a structure that is completely bent to a structure that is bent atthe scale of a few nanometers. For example, the flexible electronicdevice DD may be a curved device or a foldable device. According to someembodiments, the electronic device DD may be rigid.

The electronic device DD may display an image IM at a display areaED-AA. The display area ED-AA of the electronic device DD may besubstantially parallel to a surface defined by the first direction DR1and the second direction DR2. The electronic device DD may display theimage IM toward a third direction DR3 substantially perpendicular to aplane defined by the first direction DR1 and the second direction DR2.Meanwhile, FIG. 1 shows a flat display area ED-AA, however, according tosome embodiments, the display area ED-AA of the electronic device DD mayhave a curved shape bent from at least one side of the plane.

Front (or upper) and rear (or lower) surfaces of each member of theelectronic device DD may be opposite to each other in the thirddirection DR3, and a normal line direction of each of the front and rearsurfaces may be substantially parallel to the third direction DR3. Aseparation distance between the front and rear surfaces of each member(or each unit) in the third direction DR3 may correspond to a thicknessin the member (or the unit) in the third direction DR3.

In the present disclosure, the expression “when viewed in a plane” or“in a plan view” may refer to a state of being viewed in the thirddirection DR3. In the present disclosure, the expression “on across-section” may mean a state of being viewed in the first directionDR1 or the second direction DR2. Meanwhile, directions indicated by thefirst, second, and third directions DR1, DR2, and DR3 are relative toeach other, and thus, the directions indicated by the first, second, andthird directions DR1, DR2, and DR3 may be changed to other directions.

According to some embodiments, the image IM provided from the electronicdevice DD may include a still image as well as a video. FIG. 1 shows aclock widget and application icons as a representative example of theimage IM. A surface through which the image IM is displayed maycorrespond to a front surface of the electronic device DD and a frontsurface of a window WM (refer to FIG. 2 ).

According to some embodiments, the electronic device DD may sense anexternal input applied thereto from the outside. The external input mayinclude a variety of external inputs provided from the outside. Forexample, the external input may include force, pressure, temperature,light, etc. The external input may include an external input (e.g., ahovering input) in proximity to or approaching close to the electronicdevice DD at a distance (e.g., a set or predetermined distance) as wellas a touch input, e.g., a hand of a user or a pen.

According to some embodiments, the electronic device DD may sense theuser input through the display area ED-AA defined in the front surfacethereof and may respond the sensed input. However, the area of theelectronic device DD in which the external input is sensed should not belimited to the front surface of the electronic device DD. The electronicdevice DD may sense the user input applied to a side or rear surface ofthe electronic device DD depending on its design, however, it should notbe limited to a specific embodiment.

Referring to FIG. 2 , the electronic device DD may include a window WM,a display module DM, and a housing HAU. The window WM may be coupledwith the housing HAU to form an external appearance of the electronicdevice DD and may provide an inner spaced to accommodate components ofthe electronic device DD.

The window WM may be located on the display module DM. The window WM mayhave a shape corresponding to a shape of the display module DM. Thewindow WM may cover a front surface of the display module DM and mayprotect the display module DM from external impacts and scratches.

The window WM may include an optically transparent insulating material.As an example, the window WM may include a glass substrate or a polymersubstrate, and the window WM may include a tempered glass substrate. Thewindow WM may have a single-layer or multi-layer structure. The windowWM may further include functional layers, such as an anti-fingerprintlayer, a phase control layer, a hard coating layer, etc., located on anoptically transparent substrate.

The front surface of the window WM may correspond to the front surfaceof the electronic device DD. The front surface of the window WM mayinclude a transparent area TS and a bezel area BZA.

The transparent area TS of the window WM may be an optically transparentarea. The window WM may transmit the image IM provided from the displaymodule DM through the transparent area TS, and the user may view theimage IM. The transparent area TS of the window WM may correspond to thedisplay area ED-AA of the electronic device DD.

The bezel area BZA of the window WM may be obtained by printing amaterial having a color (e.g., a set or predetermined color) on an areaof the window WM. The bezel area BZA of the window WM may prevent orreduce external visibility of components of the display module DM, whichare arranged to overlap the bezel area BZA.

The bezel area BZA may be defined adjacent to the transparent area TS,and the shape of the transparent area TS may be defined by the bezelarea BZA. As an example, the bezel area BZA may be arranged outside thetransparent area TS and may surround the transparent area TS, however,it should not be limited thereto or thereby. The bezel area BZA may bedefined to be adjacent to only one side of the transparent area TS ormay be omitted. In addition, the bezel area BZA may be defined at a sidesurface of the electronic device DD rather than the front surface of theelectronic device DD.

The display module DM may be arranged between the window WM and thehousing HAU. The display module DM may display images in response toelectrical signals and may transmit/receive information about theexternal input. The display module DM may include an active area AA anda peripheral area NAA.

The active area AA may be activated in response to electrical signals.The images may be displayed through the active area AA, and the externalinput may be sensed in the active area AA. According to someembodiments, the active area AA of the display module DM may correspondto the above-described transparent area TS. In the present disclosure,the expression “an area/portion corresponds to another area/portion” maymean that “an area/portion overlaps another area/portion”, and theexpression should not be limited to describing a case that “anarea/portion has the same size and/or the same shape as those of anotherarea/portion”.

The peripheral area NAA may be defined adjacent to the active area AA.As an example, the peripheral area NAA may surround the active area AA,however, it should not be limited thereto or thereby. According to someembodiments, the peripheral area NAA may be defined in a variety ofshapes. A driving circuit or a driving line to drive the active area AA,various signal lines to provide electrical signals, and pads may belocated in the peripheral area NAA. The peripheral area NAA of thedisplay module DM may correspond to the bezel area BZA. Components ofthe display module DM, which are located in the peripheral area NAA, maybe prevented from being viewed from the outside by the bezel area BZA.

The housing HAU may be located under the display module DM and mayaccommodate the display module DM. The housing HAU may absorb impactsapplied thereto from the outside and may prevent or reduce instances andquantities of foreign substances and moisture entering the displaymodule DM, and thus, the display module DM may be protected by thehousing HAU. According to some embodiments, the housing HAU may beprovided in a form obtained by coupling a plurality of accommodatingmembers.

The electronic device DD may further include an electronic moduleincluding a variety of functional modules to drive the display moduleDM, a power supply module supplying a power required for an overalloperation of the electronic device DD, and a bracket coupled to thedisplay module DM and/or the housing HAU to divide an inner space of theelectronic device DD.

Referring to FIG. 3 , the display module DM may include a display panelDP, an input sensing layer ISL, and a reflection control layer RCL. Thedisplay panel DP may include a base layer BL, a circuit element layerDP-CL, a display element layer DP-ED, and an encapsulation layer TFE.

The display panel DP according to various embodiments may be alight-emitting type display panel, however, embodiments according to thepresent disclosure are not limited thereto. For instance, the displaypanel DP may be an organic light emitting display panel, an inorganiclight emitting display panel, or a quantum dot light emitting displaypanel. A light emitting layer of the organic light emitting displaypanel may include an organic light emitting material. A light emittinglayer of the inorganic light emitting display panel may include aninorganic light emitting material. A light emitting layer of the quantumdot light emitting display panel may include a quantum dot or a quantumrod. Hereinafter, the organic light emitting display panel will bedescribed as a representative example of the display panel DP.

The base layer BL may provide a base surface on which the circuitelement layer DP-CL is located. The base layer BL may be a glasssubstrate, a metal substrate, a polymer substrate, or anorganic/inorganic composite material substrate.

The circuit element layer DP-CL may be located on the base layer BL. Thecircuit element layer DP-CL may include at least one insulating layer, acircuit element, signal lines, and signal pads. The circuit elementlayer DP-CL may include a pixel driving circuit included in each ofpixels to display images and a sensor driving circuit included in eachof sensors to sense external information. As an example, the sensor maybe an optical sensor that senses biometric information using an opticalmethod.

The display element layer DP-ED may be located on the circuit elementlayer DP-CL. The display element layer DP-ED may include light emittingelements arranged to overlap the active area AA. The light emittingelements of the display element layer DP-ED may be connected to thecircuit element of the circuit element layer DP-CL to form the pixels.Each of the pixels may emit light in response to a corresponding drivingsignal through the active area AA.

The display element layer DP-ED may include light receiving elementsarranged to overlap the active area AA. Each of the light receivingelements may be an optical sensor that senses a light incident theretoand converts an optical signal to an electrical signal. As an example,the light receiving element may be a photodiode.

Configurations of the display element layer DP-ED will be described indetail later with reference to figures.

The encapsulation layer TFE may be located on the display element layerDP-ED and may encapsulate the display element layer DP-ED. Theencapsulation layer TFE may include a plurality of thin layers. The thinlayers of the encapsulation layer TFE may be provided to improve anoptical efficiency of the light emitting elements of the display elementlayer DP-ED or to protect the light emitting elements.

The input sensing layer ISL may be located on the display panel DP. Theinput sensing layer ISL may be located directly on the display panel DP.In the present disclosure, a structure in which one layer, component,member, or the like is formed on another layer, component, member, orthe like through successive processes without using a separate adhesivelayer or adhesive member will be referred to as being “directlyarranged” or “directly located”. The expression “the input sensing layerISL is located directly on the display panel DP” means that the inputsensing layer ISP is formed on a base surface of the display panel DPthrough successive processes without a separate adhesive layer after thedisplay panel DP is formed.

According to some embodiments, the input sensing layer ISL may becoupled with the display panel DP by an adhesive layer. The inputsensing layer ISL may be fixed to an upper surface of the display panelDP by the adhesive layer after being formed through a separate processfrom the display panel DP.

The input sensing layer ISL may sense the external input applied theretofrom the outside and may obtain coordinate information of the externalinput. The input sensing layer ISL may be driven in various ways, suchas a capacitive method, a resistive method, an infrared ray method, asonic method, or a pressure method, or the like, however, it should notbe particularly limited. As an example, the input sensing layer ISL maybe driven in the capacitive method and may include a plurality ofsensing electrodes to sense the external input. The input sensing layerISL may provide an input signal corresponding to the external input tothe display panel DP, and the display panel DP may generate an imagecorresponding to the input signal.

The reflection control layer RCL may be located on the input sensinglayer ISL. The reflection control layer RCL may be located directly onthe input sensing layer ISL. That is, the reflection control layer RCLmay be formed by coating or printing a composition of the reflectioncontrol layer RCL on a base surface provided by the input sensing layerISL.

The reflection control layer RCL may reduce a reflectance with respectto the external light from the outside. In addition, the reflectioncontrol layer RCL may reduce a reflected light reflected by metal layersincluded in the display panel DP together with an inorganic absorbinglayer IAP (refer to FIG. 6A) included in the display element layerDP-ED. Detailed descriptions of the reflection control layer RCL will bedescribed in more detail later.

The electronic device DD may further include an adhesive layer ALlocated between the display module DM and the window WM. The displaymodule DM and the window WM may be coupled to each other with theadhesive layer AL interposed therebetween. The adhesive layer AL mayinclude a transparent adhesive, such as an optically clear adhesive(OCA) film, an optically clear resin (OCR), or a pressure sensitiveadhesive (PSA) film. However, the adhesive included in the adhesivelayer AL should not be limited thereto or thereby.

FIG. 4 is an enlarged plan view of a display panel corresponding to anarea DD′ of FIG. 2 .

Referring to FIG. 4 , the display panel DP may include a plurality oflight emitting elements ED-1, ED-2, and ED-3 and a plurality of lightreceiving elements OPD. The light emitting elements ED-1, ED-2, and ED-3may include a first light emitting element ED-1 emitting a first color,a second light emitting element ED-2 emitting a second color, and athird light emitting element ED-3 emitting a third color.

The active area AA of the display panel DP may be divided into aplurality of light emitting areas PXA1, PXA2, and PXA3, a plurality oftransmission areas TA, and a non-light-emitting area NPXA.

The light emitting elements ED-1, ED-2, and ED-3 may be respectivelylocated in the light emitting areas PXA1, PXA2, and PXA3 and may emitlights. The light emitting areas PXA1, PXA2, and PXA3 may include afirst light emitting area PXA1 in which the first light emitting elementED-1 is located, a second light emitting area PXA2 in which the secondlight emitting element ED-2 is located, and a third light emitting areaPXA3 in which the third light emitting element ED-3 is located. As anexample, the first light emitting element ED-1 may emit a red lightthrough the first light emitting area PXA1, the second light emittingelement ED-2 may emit a green light through the second light emittingarea PXA2, and the third light emitting element ED-3 may emit a bluelight through the third light emitting area PXA3. However, colors of thelights emitted from the light emitting elements ED-1, ED-2, and ED-3should not be limited thereto or thereby.

The light receiving elements OPD may be respectively located in thetransmission areas TA. The light receiving elements OPD may receive andsense a light reflected by an external object and incident theretothrough the transmission areas TA.

The non-light-emitting area NPXA may be defined between the lightemitting areas PXA1, PXA2, and PXA3 and the transmission areas TA. Thenon-light-emitting area NPXA may surround the light emitting areas PXA1,PXA2, and PXA3 and the transmission areas TA.

Referring to FIG. 4 , the first light emitting element ED-1 and thethird light emitting element ED-3 may be alternately arranged with eachother in the first direction DR1 and the second direction DR2. FIG. 4shows a structure in which the first light emitting element ED-1 and thethird light emitting element ED-3 are alternately arranged in the firstdirection DR1 and the second direction DR2 as a representative example,however, according to some embodiments, the first light emitting elementED-1 and the third light emitting element ED-3 may be alternatelyarranged in one direction of the first direction DR1 and the seconddirection DR2. As an example, the first light emitting elements ED-1 maybe arranged in different columns or different rows from the third lightemitting elements ED-3.

The second light emitting elements ED-2 may be arranged in the firstdirection DR1 and the second direction DR2. The second light emittingelements ED-2 may be alternately arranged with the first light emittingelements ED-1 along a diagonal direction crossing each of the firstdirection DR1 and the second direction DR2 when viewed in a plane. Inaddition, the second light emitting elements ED-2 may be alternatelyarranged with the third light emitting elements ED-3 along a diagonaldirection crossing each of the first direction DR1 and the seconddirection DR2.

The light receiving elements OPD may be located between the first lightemitting element ED-1 and the third light emitting element ED-3 in thefirst direction DR1 and the second direction DR2. The light receivingelements OPD may be alternately arranged with the second light emittingelements ED-2 in the first direction DR1 and the second direction DR2.The light receiving elements OPD may be arranged along a diagonaldirection crossing each of the first direction DR1 and the seconddirection DR2.

The light emitting areas emitting lights in different wavelength rangesamong the light emitting areas PXA1, PXA2, and PXA3 may have differentsizes from each other, however, they should not be limited thereto orthereby. The light emitting areas emitting lights in differentwavelength ranges may have substantially the same size as each other.According to some embodiments, the first light emitting area PXA1 mayhave a size greater than a size of the second light emitting area PXA2and may have a size substantially equal to or smaller than a size of thethird light emitting area PXA3. A size ratio of the light emitting areasPXA1, PXA2, and PXA3 should not be limited to a size ratio shown in FIG.4 and may be changed in various ways.

Each of the light emitting areas PXA1, PXA2, and PXA3 may have aquadrangular shape when viewed in a plane, however, it should not belimited thereto or thereby. According to some embodiments, each of thelight emitting areas PXA1, PXA2, and PXA3 may have a variety of shapes,such as a polygonal shape, a circular shape, an oval shape, etc., whenviewed in the plane. In FIG. 4 , the first, second, and third lightemitting areas PXA1, PXA2, and PXA3 have the quadrangular shape whenviewed in the plane, however, they should not be limited thereto orthereby. According to some embodiments, two or more areas of the lightemitting areas PXA1, PXA2, and PXA3 may have different shapes from eachother. As an example, the first and third light emitting areas PXA1 andPXA3 may have the quadrangular shape, and the second light emitting areaPXA2 may have the circular shape.

The transmission area TA may have a size smaller than the size of thefirst light emitting area PXA1 and the size of the third light emittingarea PXA3. The size of the transmission area TA may be substantially thesame as or smaller than the size of the second light emitting area PXA2.The size of the transmission area TA should not be limited thereto orthereby.

The transmission area TA may have a quadrangular shape when viewed in aplane, however, it should not be limited thereto or thereby. Accordingto some embodiments, the transmission area TA may have a variety ofshapes, such as a polygonal shape, a circular shape, an oval shape,etc., when viewed in the plane.

Meanwhile, the arrangement of the light emitting elements ED-1, ED-2,and ED-3 and the light receiving elements OPD, the shape and the sizeratio of the light emitting areas PXA1, PXA2, and PXA3 and thetransmission areas TA shown in FIG. 4 are merely examples, and they maybe changed depending on a design of the display panel DP and should notbe particularly limited.

FIG. 5 is a cross-sectional view of the display panel DP according tosome embodiments of the present disclosure. FIG. 5 shows a cross-sectionof a light emitting element ED, a first transistor T1, a secondtransistor T2, and a connection signal line CSL, which correspond to onepixel, as a representative example.

The base layer BL may include a glass substrate, a metal substrate, apolymer substrate, or an organic/inorganic composite material substrate.The base layer BL may include a synthetic resin layer. As an example,the synthetic resin layer included in the base layer BL may include atleast one of an acrylic-based resin, a methacrylic-based resin, apolyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, aurethane-based resin, a cellulose-based resin, a siloxane-based resin, apolyamide-based resin, a perylene-based resin, or a polyimide-basedresin. However, a material for the base layer BL should not be limitedthereto or thereby.

At least one inorganic layer may be located on an upper surface of thebase layer BL. The inorganic layer may include at least one of aluminumoxide, titanium oxide, silicon oxide, silicon nitride, siliconoxynitride, zirconium oxide, or hafnium oxide. The inorganic layer maybe formed in multiple layers. The inorganic layers may form a barrierlayer BRL and a buffer layer BFL. According to some embodiments, thebuffer layer BFL and the barrier layer BRL may be selectively located onthe base layer BL.

The barrier layer BRL may be located on the base layer BL. The barrierlayer BRL may prevent or reduce instances of a foreign substanceentering from the outside. The barrier layer BRL may include a siliconoxide layer and a silicon nitride layer. According to some embodiments,the barrier layer BRL may include silicon oxide layers alternatelystacked with silicon nitride layers.

The buffer layer BFL may be located on the barrier layer BRL. The bufferlayer BFL may increase a coupling force between the base layer BL and asemiconductor pattern or between the base layer BL and a conductivepattern. According to some embodiments, the buffer layer BFL may includea silicon oxide layer and a silicon nitride layer.

The circuit element layer DP-CL may include the semiconductor pattern,the conductive pattern, and at least one insulating layer. An insulatinglayer, a semiconductor layer, and a conductive layer may be formed by acoating or depositing process during a manufacturing process of thedisplay panel DP. Then, the insulating layer, the semiconductor layer,and the conductive layer may be selectively patterned through severalphotolithography processes. After the processes are completed, thesemiconductor pattern and the conductive pattern included in the DP-CLmay be formed on the base layer BL.

FIG. 5 shows the circuit element layer DP-CL including a firstsemiconductor pattern and a second semiconductor pattern, which arelocated on different layers, as a representative example. However, across-section of driving elements included in the circuit element layerDP-CL of the present disclosure should not be limited thereto orthereby. According to some embodiments, the cross-section of the drivingelements may be changed depending on a structure of the driving circuitthat drives the pixel. As an example, transistors included in thecircuit element layer DP-CL may be formed on the same layer through alow temperature polycrystalline silicon (LTPS) process or a lowtemperature polycrystalline oxide (LTPO) process. Hereinafter, thecircuit element layer DP-CL shown in FIG. 5 will be described as arepresentative example.

The first semiconductor pattern of the circuit element layer DP-CL maybe located on the buffer layer BFL. The first semiconductor pattern mayinclude a silicon semiconductor. The first semiconductor pattern mayinclude polysilicon, however, embodiments according to the presentdisclosure are not limited thereto or thereby. For example, according tosome embodiments, the first semiconductor pattern may include amorphoussilicon.

The first semiconductor pattern may have different electrical propertiesdepending on whether or not it is doped or whether it is doped with anN-type dopant or a P-type dopant. The first semiconductor pattern mayinclude a first region with a high conductivity and a second region witha low conductivity. The first region may be doped with the N-type dopantor the P-type dopant. A P-type transistor may include a doped regiondoped with the P-type dopant, and an N-type transistor may include adoped region doped with the N-type dopant. The second region may be anon-doped region or a region doped at a concentration lower than that ofthe first region.

The first region may have a conductivity greater than that of the secondregion and may substantially serve as a source electrode and a drainelectrode of the transistor. The second region may substantiallycorrespond to an active (or a channel) of the transistor.

Referring to FIG. 5 , a first source electrode S1, a first active A1,and a first drain electrode D1 of the first transistor T1 may be formedfrom the first semiconductor pattern. The first source electrode S1 andthe first drain electrode D1 may be spaced apart from each other withthe first active A1 interposed therebetween.

The connection signal line CSL may be located on the buffer layer BFL.The connection signal line CSL may extend from the semiconductorpattern. The connection signal line CSL may be electrically connected tothe first transistor T1 when viewed in a plane.

The circuit element layer DP-CL may include a plurality of insulatinglayers located on the base layer BL. FIG. 5 shows first, second, third,fourth, fifth, sixth, and seventh insulating layers 10 to 70 as anexample of the insulating layers. However, the number of the insulatinglayers should not be limited thereto or thereby and may be changeddepending on a stack process or a configuration of the circuit elementlayer DP-CL.

Each of the first to seventh insulating layers 10 to 70 may be aninorganic layer and/or an organic layer and may have a single-layer ormulti-layer structure. The inorganic layer may include at least one ofaluminum oxide, titanium oxide, silicon oxide, silicon nitride, siliconoxynitride, zirconium oxide, or hafnium oxide, however, a material forthe inorganic layer is not limited thereto or thereby.

The organic layer may include at least one of an acrylic-based resin, amethacrylic-based resin, a polyisoprene-based resin, a vinyl-basedresin, an epoxy-based resin, a urethane-based resin, a cellulose-basedresin, a siloxane-based resin, a polyimide-based resin, or aperylene-based resin, however, embodiments according to the presentdisclosure are not limited thereto or thereby.

The first insulating layer 10 may commonly overlap with the pixels andmay cover the first semiconductor pattern and the connection signal lineCSL. A first gate electrode G1 of the first transistor T1 may be locatedon the first insulating layer 10. The first gate electrode G1 of thefirst transistor T1 may overlap the first active A1. The first gateelectrode G1 may act as a mask in a doping process of the semiconductorpattern.

The second insulating layer 20 may be located on the first insulatinglayer 10 to cover the first gate electrode G1. An upper electrode UE maybe located on the second insulating layer 20. The upper electrode UE maybe a portion of a metal pattern or a portion of the doped semiconductorpattern. A portion of the first gate electrode G1 and the upperelectrode UE overlapping the portion of the first gate electrode G1 maydefine a capacitor of the pixel. According to some embodiments, theupper electrode UE may be omitted.

The third insulating layer 30 may be located on the second insulatinglayer 20 to cover the upper electrode UE. The second semiconductorpattern may be located on the third insulating layer 30. The secondsemiconductor pattern may include oxide semiconductor containing metaloxide. The oxide semiconductor may include a crystalline or amorphousoxide semiconductor.

As an example, the oxide semiconductor may include the metal oxide ofmetals, such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), titanium(Ti), etc., or a mixture of the metal, such as zinc (Zn), indium (In),gallium (Ga), tin (Sn), titanium (Ti), etc., and oxides thereof. Theoxide semiconductor may include indium-tin oxide (ITO),indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO), indium-zinc oxide(IZO), zinc-indium oxide (ZIO), indium oxide (InO), titanium oxide(TiO), indium-zinc-tin oxide (IZTO), zinc-tin oxide (ZTO), or the like.

The second semiconductor pattern may include a plurality of areasdistinguished from each other depending on whether the metal oxide isreduced. An area (hereinafter, referred to as a reduced area) where themetal oxide is reduced may have a conductivity higher than that of anarea (hereinafter, referred to as a non-reduced area) where the metaloxide is not reduced. The reducing area may substantially act as thesource electrode or the drain electrode of the transistor. Thenon-reduced area may substantially correspond to the active or channelof the transistor.

Referring to FIG. 5 , a second source electrode S2, a second active A2,and a second drain electrode D2 of the second transistor T2 may beformed from the second semiconductor pattern. The second sourceelectrode S2 and the second drain electrode D2 may be spaced apart fromeach other with the second active A2 interposed therebetween.

The fourth insulating layer 40 may be located on the third insulatinglayer 30 to cover the second semiconductor pattern. A second gateelectrode G2 of the second transistor T2 may be located on the fourthinsulating layer 40. The second gate electrode G2 may overlap the secondactive A2.

The fifth insulating layer 50 may be located on the fourth insulatinglayer 40 to cover the second gate electrode G2. The sixth insulatinglayer 60 may be located on the fifth insulating layer 50.

A first connection electrode CNE1 may be located on the fifth insulatinglayer 50. A second connection electrode CNE2 may be located on the sixthinsulating layer 60. The first connection electrode CNE1 may beconnected to the connection signal line CSL via a first contact hole CH1defined through the first to fifth insulating layers 10 to 50. Thesecond connection electrode CNE2 may be connected to the firstconnection electrode CNE1 via a second contact hole CH2 defined throughthe sixth insulating layer 60. According to some embodiments, at leastone of the fifth insulating layer 50 or the sixth insulating layer 60may be omitted.

The display element layer DP-ED may be located on the circuit elementlayer DP-CL. The display element layer DP-ED may include the lightemitting element

ED and a pixel definition layer PDL. For example, the light emittingelement ED may include an organic light emitting element, a quantum dotlight emitting element, a micro-LED light emitting element, or anano-LED light emitting element, however, it should not be limitedthereto or thereby. According to some embodiments, the light emittingelement ED may include various embodiments as long as a light may begenerated or an amount of the light may be controlled according to anelectrical signal.

According to some embodiments, the light emitting element ED may includea pixel electrode AE, a common electrode CE, a hole control layer HCL,an electron control layer ECL, and a light emitting layer EML. The pixelelectrode AE may be located on the seventh insulating layer 70. Thepixel electrode AE may be connected to the second connection electrodeCNE2 via a third contact hole CH3 defined through the seventh insulatinglayer 70.

The pixel definition layer PDL may be located on the pixel electrode AEand the seventh insulating layer 70 and may expose a portion of thepixel electrode AE. A first opening OP-1 may be defined through thepixel definition layer PDL to expose at least a portion of the pixelelectrode AE. According to some embodiments, the portion of the pixelelectrode AE exposed through the opening OP-1 may correspond to a lightemitting area PXA. A non-light-emitting area NPXA may be definedadjacent to the light emitting area PXA and may surround the lightemitting area PXA.

The pixel definition layer PDL may be formed of a polymer resin. As anexample, the pixel definition layer PDL may include a polyacrylate-basedresin or a polyimide-based resin. The pixel definition layer PDL mayfurther include an inorganic material in addition to the polymer resin.According to some embodiments, the pixel definition layer PDL mayinclude an inorganic material. As an example, the pixel definition layerPDL may include silicon nitride (SiN_(x)), silicon oxide (SiO_(x)), orsilicon oxynitride (SiO_(x)N_(y)).

Meanwhile, the pixel definition layer PDL may include a light absorbingmaterial. The pixel definition layer PDL may include a black coloringagent. The black coloring agent may include a black pigment or a blackdye. The black coloring agent may include a metal material, such ascarbon black, chrome, etc., or an oxide thereof.

The light emitting layer EML may be located on the pixel electrode AE.The light emitting layer EML may be located in an area corresponding tothe first opening OP-1 of the pixel definition layer PDL. The lightemitting layer EML may include an organic light emitting material and/oran inorganic light emitting material. As an example, the light emittinglayer EML may include fluorescent or phosphorescent material, anorganometallic complex light emitting material, or a quantum dot. Thelight emitting layer EML may emit a light having one of red, green, andblue colors.

Meanwhile, the light emitting element ED may further include anauxiliary light emitting layer located on the light emitting layer EML.The auxiliary light emitting layer may have a thickness changeddepending on a wavelength of the light emitted from the light emittinglayer EML. As the auxiliary light emitting layer is provided, a resonantdistance may be controlled in the light emitting element ED. Inaddition, as the auxiliary light emitting layer is provided, a colorpurity of the light emitted from the light emitting layer EML may beimproved.

The hole control layer HCL may be located between the pixel electrode AEand the light emitting layer EML. The electron control layer ECL may belocated between the light emitting layer EML and the common electrodeCE. The hole control layer HCL and the electron control layer ECL may becommonly arranged over the pixels. The hole control layer HCL and theelectron control layer ECL may overlap the light emitting area PXA andthe non-light-emitting area NPXA and may be formed as a common layer.The hole control layer HCL and the electron control layer ECL may beprovided using an open mask.

The hole control layer HCL may include at least one of a hole injectionlayer or a hole transport layer, which are located between the pixelelectrode AE and the light emitting layer EML. The electron controllayer ECL may include an electron transport layer and an electroninjection layer, which are located between the light emitting layer EMLand the common electrode CE.

The hole injection layer and the hole transport layer may include aphthalocyanine compound such as copper phthalocyanine,DNTPD(N¹,N¹′-([1,1′-biphenyl]-4,4′-diyl)bis(N¹-phenyl-N⁴,N⁴-di-m-tolylbenzene-1,4-diamine)),m-MTDATA(4,4′,4″-[tris(3-methylphenyl)phenylamino]triphenylamine),TDATA(4,4′4″-Tris(N,N-diphenylamino)triphenylamine),2-TNATA(4,4′,4″-tris[N(2-naphthyl)-N-phenylamino]-triphenylamine),PEDOT/PSS(Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate)),PANI/DBSA(Polyaniline/Dodecylbenzenesulfonic acid),PANI/CSA(Polyaniline/Camphor sulfonicacid),PANI/PSS(Polyaniline/Poly(4-styrenesulfonate)),NPB(N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine),triphenylamine-containing poly(ether ketone) (TPAPEK),4-Isopropyl-4′-methyldiphenyliodonium[Tetrakis(pentafluorophenyl)borate], HATCN(dipyrazino[2,3-f: 2′,3′-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile), etc.

The hole injection layer and the hole transport layer may includecarbazole-based derivatives, e.g., n-phenyl carbazole, polyvinylcarbazole, etc., fluorene-based derivatives, triphenylamine-basedderivatives, e.g.,TPD(N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine),TCTA(4,4′,4″-tris(N-carbazolyl)triphenylamine), etc.,NPB(N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine),TAPC(4,4′-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]),HMTPD(4,4′-Bis[N,N′-(3-tolyl)amino]-3,3′-dimethylbiphenyl),mCP(1,3-Bis(N-carbazolyl)benzene), etc.

The electron transport layer may include an anthracene-based compound,however, embodiments according to the present disclosure are not limitedthereto or thereby. The electron transport layer may include, forexample, Alq₃(Tris(8-hydroxyquinolinato)aluminum),1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene,2,4,6-tris(3′-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine,2-(4-(N-phenylbenzoimidazol-1-yl)phenyl)-9,10-dinaphthylanthracene,TPBi(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol yl)benzene),BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline),Bphen(4,7-Diphenyl-1,10-phenanthroline),TAZ(3-(4-Biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole),NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole),tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole),BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1′-Biphenyl-4-olato)aluminum),Bebq₂(berylliumbis(benzoquinolin-10-olate)),ADN(9,10-di(naphthalene-2-yl)anthracene),BmPyPhB(1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene),TSPO1(diphenyl(4-(triphenylsilyl)phenyl)phosphine oxide), and mixturesthereof.

The electron injection layer may include a metal halide, such as LiF,NaCl, CsF, RbCl, RbI, Cul, Kl, etc., a lanthanum group metal, such asYb, or a co-deposition material of the metal halide and the lanthanumgroup metal. For example, the electron injection layer may include Kl:Ybor RbI:Yb as the co-deposition material. Meanwhile, the electroninjection layer may include a metal oxide, such as Li₂O or BaO, orLiq(8-hydroxyl-Lithium quinolate), however, the embodiments according tothe present disclosure are not limited thereto or thereby. The electroninjection layer may include a mixture of an electron transport materialand an insulating organo-metallic salt. The organo-metallic salt may bea material with an energy band gap of about 4 eV or more. In detail, theorgano-metallic salt may include, for example, metal acetate, metalbenzoate, metal acetoacetate, metal acetylacetonate, or metal stearate.

Meanwhile, materials included in the hole control layer HCL and theelectron control layer ECL should not be limited thereto or thereby.

The common electrode CE may be located on the light emitting layer EML.The common electrode CE may be commonly arranged over the pixels. Thecommon electrode CE may overlap the light emitting area PXA and thenon-light-emitting area NPXA and may be provided as a common layer. Thecommon electrode CE may be provided using an open mask.

Each of the pixel electrode AE and the common electrode CE may includeat least one selected from, two or more compounds selected from, two ormore mixtures selected from, or oxide of Ag, Mg, Cu, Al, Pt, Pd, Au, Ni,Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, W, In, Sn, and Zn.

Each of the pixel electrode AE and the common electrode CE may be atransmissive electrode, a transflective electrode, or a reflectiveelectrode. The transmissive electrode may include a transparent metaloxide, e.g., indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide(ZnO), indium tin zinc oxide (ITZO), etc. The transflective electrode orthe reflective electrode may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd,Ir, Cr, Li, Ca, LiF/Ca (a stack structure of LiF and Ca), LiF/Al (astack structure of LiF and Al), Mo, Ti, Yb, W, a compound thereof, or amixture thereof, e.g., AgMg, AgYb, or MgYb.

The pixel electrode AE and the common electrode CE may have amulti-layer structure of the reflective layer or the semi-transmissivelayer, which is formed of the above-mentioned material, and thetransparent conductive layer formed of indium tin oxide (ITO), indiumzinc oxide (IZO), zinc oxide (ZnO), or indium tin zinc oxide (ITZO). Asan example, the pixel electrode AE and the common electrode CE may havea three-layer structure of ITO/Ag/ITO, however, it should not be limitedthereto or thereby.

When a first voltage and a second voltage are respectively applied tothe pixel electrode AE and the common electrode CE, holes and electrons,which are injected into the light emitting layer EML, may be recombinedwith each other to generate excitons. The light emitting element ED mayemit the light when the excitons return to a ground state from anexcited state. Accordingly, the display panel DP may display the imagesthrough the active area AA (refer to FIG. 2 ).

The display element layer DP-ED may include a capping layer CPL and theinorganic absorbing layer IAP, which are located above the commonelectrode CE. The capping layer CPL may be located on the commonelectrode CE, and the inorganic absorbing layer IAP may be located onthe capping layer CPL, however, they should not be limited thereto orthereby. According to some embodiments, the inorganic absorbing layerIAP may be located on the common electrode CE, and the capping layer CPLmay be located on the inorganic absorbing layer IAP.

The capping layer CPL may have a single layer or multi-layer structure.The capping layer CPL may include an organic layer or an inorganiclayer. As an example, the inorganic layer included in the capping layerCPL may include an alkali metal compound, such as LiF, an alkaline earthmetal compound, such as MgF₂, SiON, SiNx, SiOy, or the like. The organiclayer included in the capping layer CPL may include α-NPD, NPB, TPD,m-MTDATA, Alq₃, CuPc, TPD15(N4,N4,N4′,N4′-tetra (biphenyl-4-yl)biphenyl-4,4′-diamine), TCTA(4,4′,4″-Tris (carbazol-9-yl)triphenylamine), or the like, or may include an epoxy resin or anacrylate, such as methacrylate, however, it should not be limitedthereto or thereby.

The inorganic absorbing layer IAP may include one metal material or analloy of a plurality of metal materials. The inorganic absorbing layerIAP may include a transition metal, a post-transition metal, alanthanide metal, or an alloy of two or more metals selected from thetransition metal, the post-transition metal, and the lanthanide metal.As an example, the inorganic absorbing layer IAP may include bismuth(Bi), an alloy containing Bi, ytterbium (Yb), an alloy containing Yb, acompound (Yb_(x)Bi_(y)) of Yb and Bi, manganese (Mn), or an alloycontaining Mn.

The capping layer CPL and the inorganic absorbing layer IAP may becommonly arranged over the pixels. The capping layer CPL and theinorganic absorbing layer IAP may overlap the light emitting area PXAand the non-light-emitting area NPXA and may be provided as a commonlayer.

The inorganic absorbing layer IAP may be deposited on the capping layerCPL and may have a thickness (e.g., a set or predetermined thickness).As an example, the inorganic absorbing layer IAP may have a thicknessfrom about 50Å to about 150 Å. However, the thickness of the inorganicabsorbing layer IAP should not be limited thereto or thereby.

The capping layer CPL may control a phase difference between the commonelectrode CE and the inorganic absorbing layer IAP and may prevent orreduce interference of light due to the phase difference occurring. Theinorganic absorbing layer IAP may cause a destructive interference ofthe light using thicknesses and materials of stacked layers, and thus,may reduce the reflectance with respect to the external light. Theinorganic absorbing layer IAP may reduce a reflected light generated bythe common electrode CE included in the display element layer DP-ED orother metal layers. The inorganic absorbing layer IAP may cause thedestructive interfere between the reflected light, which is reflected bythe common electrode CE and travels upward to the encapsulation layerTFE, and the reflected light, which is reflected by the inorganicabsorbing layer IAP and travels upward to the encapsulation layer TFE,and thus, low reflection characteristics of the display panel DP may beimplemented.

The encapsulation layer TFE may be located on the light emitting elementED. The encapsulation layer TFE may include an inorganic layer or anorganic layer. As shown in FIG. 5 , the encapsulation layer TFE mayinclude first and second inorganic layers IO1 and IO2 and an organiclayer OL located between the inorganic layers IO1 and IO2.

The first and second inorganic layers IO1 and IO2 may protect the pixelsfrom moisture and/or oxygen. The first and second inorganic layers IO1and IO2 may include at least one of aluminum oxide, titanium oxide,silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, orhafnium oxide, however, a material for the inorganic layers IO1 and IO2should not be limited thereto or thereby.

The organic layer OL may protect the pixel from a foreign substance suchas dust particles. The organic layer OL may include an acrylic-basedresin, however, a material for the organic layer OL should not beparticularly limited.

FIGS. 6A and 6B are cross-sectional views of the electronic device DDaccording to some embodiments of the present disclosure. FIG. 7 is agraph showing a light transmittance of the reflection control layer RCLand the inorganic absorbing layer IAP as a function of a wavelengthaccording to some embodiments of the present disclosure.

FIG. 6A shows a cross-section of the electronic device DD correspondingto the light emitting elements ED-1 and ED-2 and one light receivingelement OPD. FIG. 6B shows a cross-section of the electronic device DDcorresponding to one light emitting element ED-2 of the light emittingelements ED-1 and ED-2 and the light receiving element OPD of FIG. 6A.Details of the same components described above will be applied tocomponents of FIGS. 6A and 6B.

Referring to FIG. 6A, the display element layer DP-ED may include thelight emitting elements ED-1 and ED-2 and the light receiving elementsOPD. FIG. 6A shows the first and second light emitting elements ED-1 andED-2 and one light receiving element OPD. The above descriptions on thelight emitting element ED may be applied to the first and second lightemitting elements ED-1 and ED-2.

The light receiving element OPD may be an optical sensor that receivesand recognizes the light reflected by the external object. As anexample, the light receiving element OPD may be a biometric sensor thatrecognizes the light reflected from the user's body part, such as afingerprint or vein, and converts the optical signal into the electricalsignal.

Each of the first light emitting element ED-1 and the second lightemitting element ED-2 may include a corresponding pixel electrode ofpixel electrodes AE-1 and AE-2, a common electrode CE, a hole controllayer HCL, an electron control layer ECL, and a corresponding lightemitting layer of light emitting layers EML1 and EML2.

The light receiving element OPD may include a first electrode AE-O, alight receiving layer OPL, and a second electrode CE-O. The firstelectrode AE-O of the light receiving element OPD may be called a lightreceiving electrode. The first electrode AE-O may be located on the samelayer as a layer on which the pixel electrodes AE-1 and AE-2 of thelight emitting elements ED-1 and ED-2 are located.

The pixel definition layer PDL may be provided with first openingsOP-1-1 and OP-1-2 defined therethrough to expose a portion of the firstpixel electrode AE-1 of the first light emitting element ED-1 and aportion of the second pixel electrode AE-2 of the second light emittingelement ED-2, respectively. The portion of the first pixel electrodeAE-1, which is exposed through the first opening OP-1-1, may correspondto the first light emitting area PXA1, and the portion of the secondpixel electrode AE-2, which is exposed through the first opening OP-1-2,may correspond to the second light emitting area PXA2.

The pixel definition layer PDL may be provided with a second openingOP-2 defined therethrough to expose a portion of the first electrodeAE-O of the light receiving element OPD. The portion of the firstelectrode AE-O, which is exposed through the second opening OP-2, maycorrespond to the transmission area TA. According to some embodiments,the pixel definition layer PDL may be provided with a plurality ofsecond openings OP-2. The electronic device DD may include a pluralityof light receiving elements OPD, and the light receiving elements OPDmay be arranged to correspond to the second openings OP-2 definedthrough the pixel definition layer PDL.

The non-light-emitting area NPXA may be located between the lightemitting areas PXA1 and PXA2 and the transmission area TA. Thenon-light-emitting area NPXA may surround the light emitting areas PXA1and PXA2 and the transmission area TA. According to some embodiments,the non-light-emitting area NPXA may correspond to an area in which thepixel definition layer PDL is located.

A first light emitting layer EML1 of the first light emitting elementED-1 may be located on the first pixel electrode AE-1. A second lightemitting layer EML2 of the second light emitting element ED-2 may belocated on the second pixel electrode AE-2. The first light emittinglayer EML1 and the second light emitting layer EML2 may be located inareas respectively corresponding to the first openings OP-1-1 andOP-1-2. The first light emitting layer EML1 and the second lightemitting layer EML2 may emit lights having different colors. As anexample, the first light emitting layer EML1 may emit a red light or ablue light, and the second light emitting layer EML2 may emit a greenlight.

The light receiving layer OPL of the light receiving element OPD may bearranged on the first electrode AE-O. The light receiving layer OPL maybe located in an area overlapping the second opening OP-2 of the pixeldefinition layer PDL. The light receiving layer OPL may include a lightreceiving material that receives a light and converts the light to anelectrical signal. According to some embodiments, the light receivinglayer OPL may include an organic light receiving material. As anexample, the light receiving layer OPL may include a conjugated polymer.The light receiving layer OPL may include a thiophene-based conjugatedpolymer, a benzodithiophene-based conjugated polymer, athieno[3,4-c]pyrrole-4,6-dione(TPD)-based conjugated polymer, adiketo-pyrrole-pyrrole(DPP)-based conjugated polymer, a benzothiadiazole(BT)-based conjugated polymer, etc., however, it should not belimited thereto or thereby.

The common electrode CE may be located on the first light emitting layerEML1 and the second light emitting layer EML2. The common electrode CEmay be provided using an open mask and may be commonly arranged over thepixels. That is, the common electrode CE of the first light emittingelement ED-1 and the second light emitting element ED-2 may be providedin the form of a single common layer.

The second electrode CE-O of the light receiving element OPD may belocated on the light receiving layer OPL. The second electrode CE-O ofthe light receiving element OPD may include the same material as that ofthe common electrode CE of the light emitting elements ED-1 and ED-2 andmay be formed integrally with the common electrode CE of the lightemitting elements ED-1 and ED-2. That is, a conductive layer forming anelectrode may overlap the first light emitting area PXA1, the secondlight emitting area PXA2, the transmission area TA, and thenon-light-emitting area NPXA and may be formed as a common layer. Aportion of the electrode, which overlaps the light emitting areas PXA1and PXA2, may be defined as the electrode of the light emitting elementsED-1 and ED-2, and a portion of the electrode, which overlaps thetransmission area TA, may be defined as the second electrode CE-O of thelight receiving element OPD.

The hole control layer HCL may be located between the pixel electrodesAE-1 and AE-1 and the light emitting layers EML1 and EML2. The holecontrol layer HCL may be commonly arranged over the light emittingelements ED-1 and ED-2. A portion of the hole control layer HCL may beincluded in the light receiving element OPD. That is, a portion of thehole control layer HCL may be located between the first electrode AE-Oand the light receiving layer OPL.

The electron control layer ECL may be located between the light emittinglayers EML1 and EML2 and the common electrode CE. The electron controllayer ECL may be commonly arranged over the light emitting elements ED-1and ED-2. A portion of the electron control layer ECL may be included inthe light receiving element OPD. That is, the portion of the electroncontrol layer ECL may be located between the light receiving layer OPLand the second electrode CE-O.

Each of the hole control layer HCL and the electron control layer ECLmay be provided as one common layer. Each of the hole control layer HCLand the electron control layer ECL may be provided as the common layerover the entire of the light emitting elements ED-1 and ED-2 and thelight receiving element OPD. The hole control layer HCL and the electroncontrol layer ECL may overlap the pixel definition layer PDL, the lightemitting layers EML1 and EML2, and the light receiving layer OPL,however, they should not be limited thereto or thereby. According tosome embodiments, at least one of the hole control layer HCL or theelectron control layer ECL may be distinguished from the other of thehole control layer HCL and the electron control layer ECL by the pixeldefinition layer PDL.

The input sensing layer ISL may be located on the display panel DP. Theinput sensing layer ISL may be formed on the encapsulation layer TFE ofthe display panel DP through successive processes and may be locateddirectly on the display panel DP. The input sensing layer ISL mayinclude a first sensing insulating layer INS1, a first conductive layerCL1, a second sensing insulating layer INS2, and a second conductivelayer CL2.

Each of the first sensing insulating layer INS1 and the second sensinginsulating layer INS2 may include an inorganic layer or an organiclayer. The inorganic layer may include at least one of aluminum oxide,titanium oxide, silicon oxide, silicon nitride, silicon oxynitride,zirconium oxide, or hafnium oxide. The organic layer may include atleast one of an acrylic-based resin, a methacrylic-based resin, apolyisoprene-based resin, a vinyl-based resin, an epoxy-based resin, aurethane-based resin, a cellulose-based resin, a siloxane-based resin, apolyimide-based resin, a polyamide-based resin, or a perylene-basedresin. However, materials for the sensing insulating layers INS1 andINS2 should not be particularly limited.

The first sensing insulating layer INS1 may be located on theencapsulation layer TFE. According to some embodiments, the firstsensing insulating layer INS1 may be located directly on theencapsulation layer TFE. The first conductive layer CL1 and the secondconductive layer CL2 may be located above the first sensing insulatinglayer INS1. Each of the first conductive layer CL1 and the secondconductive layer CL2 may include conductive patterns that form the inputsensing layer ISL. The conductive patterns may include sensingelectrodes and signal lines connected to the sensing electrodes. Thesecond sensing insulating layer INS2 may be located between the firstconductive layer CL1 and the second conductive layer CL2.

Each of the first conductive layer CL1 and the second conductive layerCL2 may have a single-layer structure or a multi-layer structure oflayers stacked in the thickness direction. A conductive layer having thesingle-layer structure may include a metal layer or a transparentconductive layer. The metal layer may include molybdenum, silver,titanium, copper, aluminum, or an alloy thereof. The transparentconductive layer may include a transparent conductive oxide, such asindium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), zincperoxide (ZnO2), or indium zinc tin oxide (IZTO). Further, thetransparent conductive layer may include a conductive polymer such asPEDOT, a metal nanowire, a graphene, or the like.

The metal layer having the multi-layer structure may include metallayers. According to some embodiments, the metal layers may have athree-layer structure, i.e., a three-layer structure oftitanium/aluminum/titanium, however, it should not be limited thereto orthereby. The metal layer having the multi-layer structure may include atleast one metal layer and at least one transparent conductive layer.

One of the first conductive layer CL1 and the second conductive layerCL2 of the input sensing layer ISL may be omitted. According to someembodiments, the input sensing layer ISL may further include a thirdsensing insulating layer, and the third sensing insulating layer maycover the second conductive layer CL2.

The electronic device DD may include a light blocking layer BM and thereflection control layer RCL. The light blocking layer BM may be locatedon the input sensing layer ISL, and the reflection control layer RCL maybe located on the light blocking layer BM.

The light blocking layer BM may be provided with upper openings BM-OPdefined therethrough. The light blocking layer BM may be arranged tooverlap the non-light-emitting area NPXA. The upper openings BM-OP mayoverlap the light emitting areas PXA1 and PXA2 and the transmission areaTA, respectively. When viewed in a plane, a size of each of the upperopenings BM-OP may be substantially the same as or greater than a sizeof each of the light emitting area PXA1 and PXA2 or a size of thetransmission area TA, which overlap the upper openings BM-OP.

The light blocking layer BM may include a light absorbing material. Asan example, the light blocking layer BM may include a black coloringagent. The black coloring agent may include a black pigment or a blackdye. The black coloring agent may include a metal material, such ascarbon black, chrome, etc., or an oxide thereof.

The light blocking layer BM may be arranged directly on the inputsensing layer ISL. The light blocking layer BM may overlap the firstconductive layer CL1 and the second conductive layer CL2 when viewed ina plane. The light blocking layer BM may cover the second conductivelayer CL2 of the input sensing layer ISL. The light blocking layer BMmay prevent or reduce the external light being reflected by theconductive layers CL1 and CL2 of the input sensing layer ISL.

According to some embodiments, the input sensing layer ISL may furtherinclude a sensing insulating layer covering the second conductive layerCL2, and in this case, the light blocking layer BM may be located on thesensing insulating layer located at an uppermost position of the inputsensing layer ISL.

The reflection control layer RCL may be located on the input sensinglayer ISL. The reflection control layer RCL may be located on the lightblocking layer BM and may cover the light blocking layer BM and theupper openings BM-OP of the light blocking layer BM. The reflectioncontrol layer RCL may be formed on the input sensing layer ISL on whichthe light blocking layer BM is formed through an inkjet printingprocess.

The reflection control layer RCL may overlap the light emitting elementsED-1 and ED-2 and the light receiving element OPD and may be formed in asingle layer. As the reflection control layer RCL is formed on the lightemitting elements ED-1 and ED-2 and the light receiving element OPD inthe single layer, a patterning process to form the reflection controllayer RCL to correspond to each of the light emitting elements ED-1 andED-2 and the light receiving element OPD may be omitted, and thus,processes for the electronic device DD may be simplified.

According to some embodiments, the reflection control layer RCL mayprovide a flat upper surface thereon. Accordingly, the window WM (referto FIG. 3 ) may be coupled with the reflection control layer RCL withoutproviding a separate planarization layer on the reflection control layerRCL.

The reflection control layer RCL may include a dye. The reflectioncontrol layer RCL may include a first dye having a maximum absorptionwavelength (Amax) within a range from about 420 nm to about 500 nm and asecond dye having the maximum absorption wavelength (λ_(max)) within arange from about 560 nm to about 620 nm. According to some embodiments,the reflection control layer RCL may include a porphyrin-based dye, atetraazaporphyrin-based dye, etc. The reflection control layer RCL mayfurther include a pigment in addition to the dye. The reflection controllayer RCL may further include an organic pigment or an inorganicpigment.

The reflection control layer RCL and the inorganic absorbing layer IAPmay serve as an anti-reflective member. The reflection control layer RCLmay reduce the reflected light reflected by the metal layers such as thecommon electrode CE of the display panel DP.

The reflection control layer RCL may further include an infraredabsorber. The infrared absorber may absorb a light in an infraredwavelength range. The infrared absorber may include a diammonium-basedcompound, a squarylium-based compound, a cyanine-based compound, aphthalocyanine-based compound, a dithiolene-based compound, or the like.However, a material for the infrared absorber should not be particularlylimited.

The reflection control layer RCL may further include an ultravioletabsorber. The ultraviolet absorber may absorb a light in an ultravioletwavelength range. The ultraviolet absorber may include a triazine-basedcompound, a benzotriazole-based compound, or the like. However, amaterial for the ultraviolet absorber should not be particularlylimited.

FIG. 6B shows a state of the electronic device that senses a fingerprintFG corresponding to the external input. Referring to FIG. 6B, a lightOT-L emitted from the light emitting element ED-2 of the electronicdevice DD may be reflected by an external object, e.g., the fingerprintFG of the user, and the reflected light IP-La by the external object maybe incident into the light receiving element OPD. The reflected lightIP-La incident into the light receiving element OPD may be within avisible light region. The light receiving element OPD may receive thereflected light IP-La incident thereto, may convert the reflected lightIP-La to an electrical signal to sense the external input, and maychange the driving state of the electronic device DD. Meanwhile, thereflected light IP-La may be referred to as a sensing light in thepresent disclosure.

In the electronic device DD, the reflected light IP-La may be incidentto the light receiving element OPD after passing through the reflectioncontrol layer RCL and the inorganic absorbing layer IAP. Accordingly, asensitivity of the light receiving element OPD may be changed dependingon a transmittance of the reflection control layer RCL with respect tothe reflected light IP-La and a transmittance of the inorganic absorbinglayer IAP with respect to the reflected light IP-La and may beproportional to the transmittance of each the reflection control layerRCL and the inorganic absorbing layer IAP with respect to the reflectedlight IP-La.

Referring to FIGS. 6A and 7 , the inorganic absorbing layer IAP and thereflection control layer RCL may transmit a light in blue, green, andred wavelength regions at a ratio (e.g., a set or predetermined ratio)or more. As an example, the light emitting element ED-2 located adjacentto the light receiving element OPD may emit a green light, and thereflected light IP-La may be a light in a green wavelength region.Referring to FIG. 7 , each of the inorganic absorbing layer IAP and thereflection control layer RCL may transmit about 80% or more of the lightin the green wavelength region. As the inorganic absorbing layer IAP andthe reflection control layer RCL transmit lights in the blue, green, andred wavelength regions at a ratio (e.g., a set or predetermined ratio)or more, the reflectance of the electronic device DD with respect to theexternal light may be reduced without deteriorating the sensitivity ofthe light receiving element OPD.

In addition, the reflection control layer RCL may further include aninfrared absorber and/or an ultraviolet absorber. As the reflectioncontrol layer RCL including the infrared absorber and/or the ultravioletabsorber is arranged to overlap the light receiving element OPD, thelights in infrared, near-infrared, and ultraviolet wavelength regions,which are provided from the outside, may be prevented or reduce frombeing provided to the light receiving element OPD. Accordingly, asensing noise, a sensitivity reduction, and a malfunction of the lightreceiving element OPD, which are caused by the external light may beimproved. In addition, as the reflection control layer RCL including theinfrared absorber and/or the ultraviolet absorber is located, theelectronic device DD may have the reduced reflectance with respect tothe external light and the improved sensing characteristics without aseparate light blocking member.

Referring to FIGS. 6A and 7 , the inorganic absorbing layer IAP maytransmit a light in a visible light region at a ratio (e.g., a set orpredetermined ratio) or more. As an example, the inorganic absorbinglayer IAP may transmit about 70% or more, in detail, about 80% or more,of the light in the visible light region. Accordingly, the inorganicabsorbing layer IAP may reduce the reflectance with respect to theexternal light without decreasing a light emission efficiency of thelight emitting elements ED-1 and ED-2.

The reflection control layer RCL may transmit the lights in the blue,green, and red wavelength regions at the ratio (e.g., the set orpredetermined ratio) or more. Accordingly, the reflection control layerRCL may be located on the light emitting elements respectively emittingthe blue, green, and red lights. That is, the reflection control layerRCL provided in the integral form may be arranged to overlap the lightemitting elements emitting the lights having different colors. Thereflection control layer RCL may reduce the reflectance with respect tothe external light without decreasing the light emission efficiency ofthe light emitting elements ED-1 and ED-2. In addition, processes toform a separate anti-reflective member in each of the light emittingelements ED-1 and ED-2 are omitted, and thus, the processes for theelectronic device DD may be simplified.

As the reflection control layer RCL includes the dye that absorbs alight in a specific wavelength region, colors of the electronic deviceDD may be controlled. As an example, as the reflection control layer RCLincludes the dye that absorbs the light in the wavelength region betweenthe blue light and the green light and the light in the wavelengthregion between the green light and the red light, the color of the lightemitting elements ED-1 and ED-2 may not be deteriorated.

FIGS. 8A and 8B are cross-sectional views of electronic devicesaccording to embodiments of the present disclosure. In FIGS. 8A and 8B,the same reference numerals denote the same elements in FIGS. 6A and 6B.Thus, detailed descriptions of the same elements will be omitted, anddifferent features will be mainly described.

Referring to FIG. 8A, the reflection control layer RCL may be providedwith an opening pattern R-OP defined therethrough to correspond to thetransmission area TA. The reflection control layer RCL may be patternedby a photolithography process to form the opening pattern R-OP. Theopening pattern R-OP may overlap the light receiving element OPD, andthus, the reflection control layer RCL may not overlap the lightreceiving element OPD when viewed in a plane. Accordingly, atransmittance with respect to the sensing light incident into the lightreceiving element OPD through the transmission area TA may be improvedcompared with that when the sensing light passes through the reflectioncontrol layer RCL.

Referring to FIG. 8B, the display element layer DP-ED may furtherinclude a low adhesion pattern WAL located in the transmission area TA.The low adhesion pattern WAL may be located on the light receivingelement OPD. The low adhesion pattern WAL may be located on the secondelectrode CE-O of the light receiving element OPD.

The low adhesion pattern WAL may include a fluorine-based compoundincluding fluorine (F). As an example, the low adhesion pattern WAL mayinclude a fluorine-based carbon compound. The low adhesion pattern WALmay include a substance in which at least one hydrogen of the carboncompound is substituted with fluorine. As an example, the low adhesionpattern WAL may include a compound including a functional group of —CF,—CF₂, or —CF₃.

The low adhesion pattern WAL may have an optical transparency. The lowadhesion pattern WAL may have a light transmittance higher than that ofthe common electrode CE. As an example, the low adhesion pattern WAL mayhave the light transmittance equal to or greater than about 80%,however, it should not be limited thereto or thereby.

According to some embodiments, the capping layer CPL may be locatedbetween the common electrode CE and the inorganic absorbing layer IAP.The capping layer CPL may be located on the low adhesion pattern WAL andthen may be patterned not to overlap the transmission area TA.Accordingly, as shown in FIG. 8B, the capping layer CPL may not overlapthe light receiving element OPD and the low adhesion pattern WAL whenviewed in a plane, however, it should not be limited thereto or thereby.According to some embodiments, a portion of the capping layer CPL mayoverlap a portion of the low adhesion pattern WAL in the non-displayarea NPXA when viewed in a plane.

The capping layer CPL may be formed through a separate patterningprocess and may not overlap the transmission area TA. As an example, thecapping layer CPL may be formed using a separate fine metal mask (FMM),and thus, an opening corresponding to the light receiving element OPDmay be formed through the capping layer CPL. As the capping layer CPL ispatterned, an upper surface of the low adhesion pattern WAL may beexposed.

Meanwhile, the capping layer CPL may be located on the common electrodeCE before the low adhesion pattern WAL is located. The capping layer CPLmay be formed on the common electrode CE as an integral layer to overlapthe light emitting area PXA, the non-light-emitting area NPXA, and thetransmission area TA, and then, the capping layer CPL may be patternedto allow the opening overlapping the transmission area TA to be formed.Then, the low adhesion pattern WAL may be located on the secondelectrode CE-O exposed through the opening defined through the cappinglayer CPL.

The inorganic absorbing layer IAP may be located on the capping layerCPL. The inorganic absorbing layer IAP may be located on the cappinglayer CPL patterned by a vacuum deposition method. The inorganicabsorbing layer IAP may be patterned and may not be located on the lowadhesion pattern WAL due to the low adhesion pattern WAL. Due to aninfluence of surface properties of the low adhesion pattern WAL, anadhesion between the low adhesion pattern WAL and the inorganicabsorbing layer IAP may be lowered, and accordingly, the inorganicabsorbing layer IAP may not be stably formed on the low adhesion patternWAL. Therefore, the inorganic absorbing layer IAP may be patterned suchthat the opening having a shape corresponding to that of the lowadhesion pattern WAL is formed. In the present disclosure, the openingdefined through the inorganic absorbing layer IAP may be defined as atransmissive opening.

According to some embodiments, the electronic device DD may have astructure in which the capping layer CPL and the inorganic absorbinglayer IAP are removed in the transmission area TA, and the lightreceiving element OPD may not overlap the capping layer CPL and theinorganic absorbing layer IAP when viewed in a plane. Accordingly, thetransmittance with respect to the sensing light incident into the lightreceiving element OPD through the transmission area TA may be improvedcompared with the transmittance when the sensing light travels throughthe capping layer CPL and the inorganic absorbing layer IAP. Inaddition, as the capping layer CPL is located under the inorganicabsorbing layer IAP, the reflectance with respect to the external lightmay be effectively reduced without decreasing a light emissionefficiency of the light emitting element ED.

FIGS. 9A to 9D are cross-sectional views of electronic devices accordingto embodiments of the present disclosure. In FIGS. 9A and 9D, the samereference numerals denote the same elements of the above-mentionedelectronic device. Thus, detailed descriptions of the same elements willbe omitted, and different features will be mainly described.

Referring to FIG. 9A, the reflection control layer RCL of the electronicdevice DD may be provided with the opening pattern R-OP overlapping thelight receiving element OPD as the embodiments shown with respect toFIG. 8A, the electronic device DD may further include the low adhesionpattern WAL as the embodiments shown with respect to FIG. 8B, and thecapping layer CPL and the inorganic absorbing layer IAP may not overlapthe light receiving element OPD when viewed in a plane.

That is, the electronic device DD may include the inorganic absorbinglayer IAP and the reflection control layer RCL that are patterned suchthat portions thereof are removed in areas corresponding to thetransmission area TA in which the light receiving element OPD isarranged as shown in FIG. 9A. Accordingly, the transmittance withrespect to the sensing light incident into the light receiving elementOPD may be improved, and the sensitivity of the light receiving elementOPD may be improved. In addition, as the electronic device DD mayinclude the inorganic absorbing layer IAP located on the light emittingelement ED and the reflection control layer RCL located above theinorganic absorbing layer IAP, the electronic device DD may have thereduced reflectance with respect to the external light.

Referring to FIG. 9B, when compared with the electronic device DD ofFIG. 9A, the capping layer CPL of the electronic device DD may belocated on the inorganic absorbing layer IAP. The capping layer CPL maybe provided over the pixels as a common layer. The capping layer CPL mayoverlap the light emitting area PXA, the non-light-emitting area NPXA,and the transmission area TA when viewed in a plane.

According to some embodiments, the inorganic absorbing layer IAP may beformed by placing the low adhesion pattern WAL on the light receivingelement OPD and depositing the low adhesion pattern WAL on the commonelectrode CE. Due to the influence of the surface characteristics of thelow adhesion pattern WAL, the adhesion between the low adhesion patternWAL and the inorganic absorbing layer IAP may be lowered, and theinorganic absorbing layer IAP may be patterned and may not be located onthe low adhesion pattern WAL.

As the low adhesion pattern WAL is located on the light receivingelement OPD, the inorganic absorbing layer IAP may be prevented fromoverlapping the transmission area TA, and the inorganic absorbing layerIAP may be relatively stably removed from a specific area without aseparate additional patterning process.

After the inorganic absorbing layer IAP is formed, the capping layer CPLmay be located on the inorganic absorbing layer IAP. The process ofpatterning the capping layer CPL may be omitted, and the capping layerCPL may overlap the light receiving element OPD when viewed in a plane.

Referring to FIG. 9C, the capping layer CPL may be located between thecommon electrode CE and the inorganic absorbing layer IAP and mayoverlap the transmission area TA. The capping layer CPL may be formed onthe common electrode CE in an integral form and may overlap the lightemitting area PXA, the non-light-emitting area NPXA, and thetransmission area TA.

The low adhesion pattern WAL may be located on the capping layer CPL tooverlap the transmission area TA. After the low adhesion pattern WAL isarranged, the inorganic absorbing layer IAP may be formed on the cappinglayer CPL. The inorganic absorbing layer IAP may be patterned and maynot be located on the transmission area TA due to the low adhesionpattern WAL. Accordingly, the inorganic absorbing layer IAP may notoverlap the light receiving element OPD when viewed in a plane.

As the process of patterning the capping layer CPL is omitted, amanufacturing process of the electronic device DD may be simplified. Inaddition, as the low adhesion pattern WAL is formed on the capping layerCPL having a relatively high adhesion with respect to the low adhesionpattern WAL, the low adhesion pattern WAL may be more easily formed. Inaddition, as the capping layer CPL is located under the inorganicabsorbing layer IAP, the reflectance of the electronic device DD withrespect to the external light may be effectively reduced.

FIG. 9D shows a state in which the electronic device DD of FIG. 9Asenses the fingerprint FG that is the external input. Referring to FIG.9D, the electronic device DD may further include an overcoat layer OClocated on the reflection control layer RCL. The overcoat layer OC maycover a step difference of the patterned reflection control layer RCLand may provide a flat upper surface. The overcoat layer OC may have anoptically transparent property. The light transmittance of the overcoatlayer OC may be higher than the light transmittance of the reflectioncontrol layer RCL. The overcoat layer OC may include a polymer resin,such as an acrylic resin, an epoxy resin.

However, according to some embodiments, the adhesive layer AL (refer toFIG. 3 ) and the window WM (refer to FIG. 3 ) may be located on thepatterned reflection control layer RCL. The reflection control layer RCLmay be coupled with the window WM (refer to FIG. 3 ) by the adhesivelayer AL (refer to FIG. 3 ).

Referring to FIG. 9D, the light OT-L emitted from the light emittingelement ED may be reflected by the fingerprint FG of the user, areflected light IP-Lb reflected by the fingerprint FG may be incidentinto the light receiving element OPD. When compared with the embodimentsshown with respect to FIG. 6B, the reflected light IP-Lb may be incidentinto the light receiving element OPD without passing through thereflection control layer RCL, the inorganic absorbing layer IAP, and thecapping layer CPL. According to some embodiments, the reflected lightIP-Lb may pass through the overcoat layer OC and the low adhesionpattern WAL, which have a relatively high light transmittance comparedwith the reflection control layer RCL, the inorganic absorbing layerIAP, and the capping layer CPL. Accordingly, the light transmittancewith respect to the sensing light traveling toward the light receivingelement OPD may be improved, and the sensitivity of the light receivingelement OPD may be improved.

FIG. 10 is a cross-sectional view of an electronic device according tosome embodiments of the present disclosure. In FIG. 10 , the samereference numerals denote the same elements of FIG. 9A. Thus, detaileddescriptions of the same elements will be omitted, and differentfeatures will be mainly described.

Referring to FIG. 10 , the electronic device DD may further include anorganic pattern portion OPM located in the opening pattern R-OP of thereflection control layer RCL. The organic pattern portion OPM may belocated in the transmission area TA, and the organic pattern portion OPMmay overlap the light receiving element OPD when viewed in a plane.

The organic pattern portion OPM may include a dye or a pigment. As anexample, the organic pattern portion OPM may include at least one of agreen dye, a green pigment, a yellow dye, or a yellow pigment. Theorganic pattern portion OPM may include a phthalocyanine-based dye, aquinophthalone-based dye, etc. However, a material for the organicpattern portion OPM should not be limited thereto or thereby.

The organic pattern portion OPM may prevent or reduce light in red andblue wavelength regions, which are incident thereinto from the outside,being supplied to the light receiving element OPD. According to someembodiments, the sensing light incident into the light receiving elementOPD may be a reflected light that is the green light emitted from thelight emitting element ED and reflected by the external object. In acase where the external lights in the red and blue wavelength regionsare incident into the light receiving element OPD, a sensing noise, asensitivity reduction, and a malfunction of the light receiving elementOPD may occur. However, when the organic pattern portion OPM is locatedin the transmission area TA, the sensing reliability of the lightreceiving element OPD may be improved.

The dye included in the organic pattern portion OPM may be differentfrom the dye included in the reflection control layer RCL. The organicpattern portion OPM may be arranged to overlap the light receivingelement OPD when viewed in a plane to reduce the sensing noise of thelight receiving element OPD, and the reflection control layer RCL may bearranged to overlap the light emitting element ED when viewed in a planeto reduce the reflectance with respect to the external light.

The organic pattern portion OPM may further include an infraredabsorber. The infrared absorber may absorb a light in an infraredwavelength region. The infrared absorber may include a diimmonium-basedcompound, a squarylium-based compound, a cyanine-based compound, aphthalocyanine-based compound, a dithiolene-based compound, or the like.However, a material for the infrared absorber should not be limitedthereto or thereby.

The organic pattern portion OPM may further include an ultravioletabsorber. The ultraviolet absorber may absorb a light in an ultravioletwavelength region. The ultraviolet absorber may include a triazine-basedcompound, a benzotriazole-based compound, or the like. However, amaterial for the ultraviolet absorber should not be limited thereto orthereby.

As the organic pattern portion OPM including the infrared absorberand/or the ultraviolet absorber is arranged to overlap the lightreceiving element OPD, the lights in infrared, near-infrared, andultraviolet wavelength regions, which are provided from the outside, maybe prevented from being provided to the light receiving element OPD.Accordingly, the sensing noise, the sensitivity reduction, and themalfunction of the light receiving element OPD, which are caused by theexternal light, may be improved.

The electronic device may include the light emitting element and thelight receiving element and may include the inorganic absorbing layerand the reflection control layer located on the light emitting elementand the light receiving element. The inorganic absorbing layer and thereflection control layer may reduce the reflection of the externallight, and thus, the light emission efficiency of the electronic devicemay be improved. In addition, the inorganic absorbing layer and thereflection control layer may reduce the noise of the external light, andthus, the sensing reliability of the light receiving element may beimproved.

According to some embodiments, an electronic device may include theinorganic absorbing layer and the reflection control layer, which arepatterned and partially removed in the area corresponding to thetransmission area in which the light receiving element is located, andaccordingly, the light transmittance with respect to the sensing lightincident into the light receiving element may be improved. As a result,the sensitivity of the light receiving element may be improved. Inaddition, the electronic device may include the inorganic absorbinglayer and the reflection control layer located on the light emittingelement, and thus, the reflectance of the electronic device with respectto the external light may be reduced. The inorganic absorbing layer ofthe electronic device may be relatively easily patterned due to the lowadhesion pattern located on the light receiving element.

Although the embodiments of the present disclosure have been described,it is understood that the present disclosure should not be limited tothese embodiments but various changes and modifications can be made byone ordinary skilled in the art within the spirit and scope of thepresent disclosure as hereinafter claimed.

Therefore, the disclosed subject matter should not be limited to anysingle embodiment described herein, and the scope of the presentinventive concept shall be determined according to the attached claims,and their equivalents.

What is claimed is:
 1. An electronic device comprising: a base layer; adisplay element layer on the base layer; and a reflection control layeron the display element layer and comprising a dye, the display elementlayer comprising: a pixel definition layer having first, second, andthird openings formed therethrough; a first light emitting elementcorresponding to the first opening and emitting a first light; a secondlight emitting element corresponding to the second opening and emittinga second light different from the first light; a light receiving elementcorresponding to the third opening; and an inorganic absorbing layer onthe first and second light emitting elements, and wherein the reflectioncontrol layer overlaps the first light emitting element and the secondlight emitting element.
 2. The electronic device of claim 1, wherein thereflection control layer comprises a first dye having a maximumabsorption wavelength within a range of 420 nm to 500 nm and a seconddye having a maximum absorption wavelength within a range of 560 nm to620 nm.
 3. The electronic device of claim 1, wherein the reflectioncontrol layer comprises at least one of a porphyrin-based dye or atetraazaporphyrin-based dye.
 4. The electronic device of claim 1,wherein the reflection control layer further comprises at least one ofan infrared absorber or an ultraviolet absorber.
 5. The electronicdevice of claim 1, wherein the reflection control layer has an openingpattern formed therethrough, and the opening pattern overlaps the lightreceiving element in a plan view.
 6. The electronic device of claim 5,further comprising an organic pattern portion in the opening pattern,wherein the organic pattern portion comprises at least one of a greendye or a yellow dye.
 7. The electronic device of claim 6, wherein theorganic pattern portion comprises at least one of a phthalocyanine-baseddye or a quinophthalone-based dye.
 8. The electronic device of claim 6,wherein the organic pattern portion further comprises an infraredabsorber, and the infrared absorber comprises at least one of adiimmonium-based compound, a squarylium-based compound, a cyanine-basedcompound, a phthalocyanine-based compound, or a dithiolene-basedcompound.
 9. The electronic device of claim 6, wherein the organicpattern portion further comprises an ultraviolet absorber, and theultraviolet absorber comprises at least one of a triazine-based compoundor a benzotriazole-based compound.
 10. The electronic device of claim 1,wherein the display element layer further comprises a low adhesionpattern on the light receiving element, and the inorganic absorbinglayer does not overlap the low adhesion pattern in a plan view.
 11. Theelectronic device of claim 10, wherein the low adhesion patterncomprises a fluorine-based compound.
 12. The electronic device of claim1, wherein the display element layer further comprises a capping layeron or under the inorganic absorbing layer, and the capping layeroverlaps the first and second light emitting elements and the lightreceiving element in a plan view.
 13. The electronic device of claim 1,wherein the display element layer further comprises a capping layerbetween the inorganic absorbing layer and the first and second lightemitting elements, and the capping layer does not overlap the lightreceiving element in a plan view.
 14. The electronic device of claim 1,wherein the inorganic absorbing layer comprises a transition metal, apost-transition metal, a lanthanide metal, or an alloy of two or moremetals selected from the transition metal, the post-transition metal,and the lanthanide metal.
 15. The electronic device of claim 1, furthercomprising: an input sensing layer between the display element layer andthe reflection control layer; and a light blocking layer on the inputsensing layer and having upper openings formed therethrough, wherein theinput sensing layer comprises: a first conductive layer on the displayelement layer; a second conductive layer on the first conductive layer;and a sensing insulating layer between the first conductive layer andthe second conductive layer, and the upper openings overlap the first,second, and third openings, respectively.
 16. An electronic devicecomprising: a display element layer comprising a light emitting area, atransmission area, and a non-light-emitting area surrounding the lightemitting area and the transmission area; and a reflection control layeron the display element layer and comprising a dye, the display elementlayer comprising: a light emitting element in the light emitting area; alight receiving element in the transmission area; a low adhesion patternon the light receiving element; and an inorganic absorbing layer on thelight emitting element, wherein the inorganic absorbing layer has atransmission opening formed therethrough to overlap the low adhesionpattern in a plan view.
 17. The electronic device of claim 16, whereinthe display element layer further comprises a capping layer under theinorganic absorbing layer and overlapping the light emitting area andthe transmission area, and the low adhesion pattern is on the cappinglayer.
 18. The electronic device of claim 16, wherein the displayelement layer further comprises a capping layer under the inorganicabsorbing layer and provided with an opening defined therethrough tooverlap the transmission area, and the low adhesion pattern is in theopening of the capping layer.
 19. The electronic device of claim 16,wherein the display element layer further comprises a capping layer onthe inorganic absorbing layer and overlapping the light emitting areaand the transmission area, and the capping layer covers the low adhesionpattern.
 20. The electronic device of claim 16, wherein the reflectioncontrol layer has an opening pattern defined therethrough, and theopening pattern overlaps the transmission opening in a plan view.